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TISP3070H3SL THRU TISP3095H3SL, TISP3125H3SL THRU TISP3210H3SL TISP3250H3SL THRU TISP3350H3SL DUAL BIDIRECTIONAL THYRISTOR OVERVOLTAGE PROTECTORS
Copyright (c) 1999, Power Innovations Limited, UK JANUARY 1999 - REVISED MAY 1999
TELECOMMUNICATION SYSTEM 2x100 A 10/1000 OVERVOLTAGE PROTECTORS
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Ion-Implanted Breakdown Region - Precise DC and Dynamic Voltages
DEVICE `3070 `3080 `3095 `3125 `3135 `3145 `3180 `3210 `3250 `3290 `3350 VDRM V 58 65 75 100 110 120 145 160 190 220 275 V(BO) V 70 80 95 125 135 145 180 210 250 290 350
SL PACKAGE (TOP VIEW)
T G R
1 2 3 MDXXAG
device symbol
T R
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Rated for International Surge Wave Shapes - Guaranteed -40 C to +85 C Performance
WAVE SHAPE 2/10 s 8/20 s 10/160 s 10/700 s 10/560 s 10/1000 s STANDARD GR-1089-CORE IEC 61000-4-5 FCC Part 68 FCC Part 68 ITU-T K20/21 FCC Part 68 GR-1089-CORE ITSP A 500 300 250 200 160 100
SD3XAA
G Terminals T, R and G correspond to the alternative line designators of A, B and C
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3-Pin Through-Hole Packaging - Compatible with TO-220AB pin-out - Low Height. . . . . . . . . . . . . . . . . . . . .8.3 mm Low Differential Capacitance - Value at -2 V/-50 V Bias. . . . . . . .67 pF max.
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description
The TISP3xxxH3SL limits overvoltages between the telephone line Ring and Tip conductors and Ground. Overvoltages are normally caused by a.c. power system or lightning flash disturbances which are induced or conducted on to the telephone line. The protector consists of two symmetrical voltage-triggered bidirectional thyristors. Overvoltages are initially clipped by breakdown clamping until the voltage rises to the breakover level, which causes the device to crowbar into a low-voltage on state. This low-voltage on state causes the current resulting from the overvoltage to be safely diverted through the device. The high crowbar holding current prevents d.c. latchup as the diverted current subsides. This TISP3xxxH3SL range consists of eleven voltage variants to meet various maximum system voltage levels (58 V to 275 V). They are guaranteed to voltage limit and withstand the listed international lightning surges in both polarities. These high current protection devices are in a 3-pin single-in-line (SL) plastic package and are supplied in tube pack. For alternative impulse rating, voltage and holding current values in SL packaged protectors, consult the factory. For lower rated impulse currents in the SL package, the 35 A 10/1000 TISP3xxxF3SL series is available. These monolithic protection devices are fabricated in ion-implanted planar structures to ensure precise and matched breakover control and are virtually transparent to the system in normal operation.
PRODUCT
INFORMATION
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Information is current as of publication date. Products conform to specifications in accordance with the terms of Power Innovations standard warranty. Production processing does not necessarily include testing of all parameters.
TISP3070H3SL THRU TISP3095H3SL, TISP3125H3SL THRU TISP3210H3SL TISP3250H3SL THRU TISP3350H3SL DUAL BIDIRECTIONAL THYRISTOR OVERVOLTAGE PROTECTORS
JANUARY 1999 - REVISED MAY 1999
absolute maximum ratings, TA = 25C (unless otherwise noted)
RATING `3070 `3080 `3095 `3125 `3135 Repetitive peak off-state voltage, (see Note 1) `3145 `3180 `3210 `3250 `3290 `3350 Non-repetitive peak on-state pulse current (see Notes 2, 3 and 4) 2/10 s (GR-1089-CORE, 2/10 s voltage wave shape) 8/20 s (IEC 61000-4-5, 1.2/50 s voltage, 8/20 current combination wave generator) 10/160 s (FCC Part 68, 10/160 s voltage wave shape) 5/200 s (VDE 0433, 10/700 s voltage wave shape) 0.2/310 s (I3124, 0.5/700 s voltage wave shape) 5/310 s (ITU-T K20/21, 10/700 s voltage wave shape) 5/310 s (FTZ R12, 10/700 s voltage wave shape) 5/320 s (FCC Part 68, 9/720 s voltage wave shape) 10/560 s (FCC Part 68, 10/560 s voltage wave shape) 10/1000 s (GR-1089-CORE, 10/1000 s voltage wave shape) Non-repetitive peak on-state current (see Notes 2, 3 and 5) 20 ms (50 Hz) full sine wave 16.7 ms (60 Hz) full sine wave 1000 s 50 Hz/60 Hz a.c. Initial rate of rise of on-state current, Junction temperature Storage temperature range Exponential current ramp, Maximum ramp value < 200 A diT/dt TJ Tstg ITSM 55 60 1 400 -40 to +150 -65 to +150 A/s C C A ITSP 500 300 250 220 200 200 200 200 160 100 A VDRM SYMBOL VALUE 58 65 75 100 110 120 145 160 190 220 275 V UNIT
NOTES: 1. See Figure 9 for voltage values at lower temperatures. 2. Initially the TISP3xxxH3SL must be in thermal equilibrium. 3. These non-repetitive rated currents are peak values of either polarirty. The rated current values may be applied to the R or T terminals. Additionally, both R and T terminals may have their rated current values applied simultaneously (in this case the G terminal return current will be the sum of the currents applied to the R and T terminals). The surge may be repeated after the TISP3xxxH3SL returns to its initial conditions. 4. See Figure 10 for impulse current ratings at other temperatures. Above 85 C, derate linearly to zero at 150 C lead temperature. 5. EIA/JESD51-2 environment and EIA/JESD51-3 PCB with standard footprint dimensions connected with 5 A rated printed wiring track widths. See Figure 8 for the current ratings at other durations. Figure 8 shows the R and T terminal current rating for simulateous operation. In this condition, the G terminal current will be 2xITSM(t), the sum of the R and T terminal currents. Derate current values at -0.61 %/C for ambient temperatures above 25 C.
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INFORMATION
TISP3070H3SL THRU TISP3095H3SL, TISP3125H3SL THRU TISP3210H3SL TISP3250H3SL THRU TISP3350H3SL DUAL BIDIRECTIONAL THYRISTOR OVERVOLTAGE PROTECTORS
JANUARY 1999 - REVISED MAY 1999
electrical characteristics for the R and G or T and G terminals, TA = 25C (unless otherwise noted)
PARAMETER IDRM Repetitive peak offstate current VD = VDRM TEST CONDITIONS TA = 25C TA = 85C `3070 `3080 `3095 `3125 `3135 V(BO) Breakover voltage dv/dt = 750 V/ms, RSOURCE = 300 `3145 `3180 `3210 `3250 `3290 `3350 `3070 `3080 `3095 dv/dt 1000 V/s, Linear voltage ramp, V(BO) Impulse breakover voltage Maximum ramp value = 500 V di/dt = 20 A/s, Linear current ramp, Maximum ramp value = 10 A `3125 `3135 `3145 `3180 `3210 `3250 `3290 `3350 I(BO) VT IH dv/dt ID Breakover current On-state voltage Holding current Critical rate of rise of off-state voltage Off-state current dv/dt = 750 V/ms, RSOURCE = 300 0.15 0.15 5 TA = 85C Vd = 1 V rms, VD = 0, `3070 thru `3095 `3125 thru `3210 `3250 thru `3350 f = 100 kHz, Vd = 1 V rms, VD = -1 V `3070 thru `3095 `3125 thru `3210 `3250 thru `3350 Coff Off-state capacitance f = 100 kHz, Vd = 1 V rms, VD = -2 V `3070 thru `3095 `3125 thru `3210 `3250 thru `3350 f = 100 kHz, Vd = 1 V rms, VD = -50 V `3070 thru `3095 `3125 thru `3210 `3250 thru `3350 f = 100 kHz, (see Note 6) NOTE 6: To avoid possible voltage clipping, the `3125 is tested with VD = -98 V. Vd = 1 V rms, VD = -100 V `3125 thru `3210 `3250 thru `3350 10 170 90 84 150 79 67 140 74 62 73 35 28 33 26 pF IT = 5 A, tW = 100 s IT = 5 A, di/dt = +/-30 mA/ms Linear voltage ramp, Maximum ramp value < 0.85VDRM VD = 50 V f = 100 kHz, MIN TYP MAX 5 10 70 80 95 125 135 145 180 210 250 290 350 78 88 103 134 144 154 189 220 261 302 362 0.6 3 0.6 A V A kV/s A V V UNIT A
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INFORMATION
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TISP3070H3SL THRU TISP3095H3SL, TISP3125H3SL THRU TISP3210H3SL TISP3250H3SL THRU TISP3350H3SL DUAL BIDIRECTIONAL THYRISTOR OVERVOLTAGE PROTECTORS
JANUARY 1999 - REVISED MAY 1999
electrical characteristics for the R and T terminals, TA = 25C
PARAMETER IDRM Repetitive peak offstate current VD = 2VDRM `3070 `3080 `3095 `3125 `3135 V(BO) Breakover voltage dv/dt = 750 V/ms, RSOURCE = 300 `3145 `3180 `3210 `3250 `3290 `3350 `3070 `3080 `3095 dv/dt 1000 V/s, Linear voltage ramp, V(BO) Impulse breakover voltage Maximum ramp value = 500 V di/dt = 20 A/s, Linear current ramp, Maximum ramp value = 10 A `3125 `3135 `3145 `3180 `3210 `3250 `3290 `3350 TEST CONDITIONS MIN TYP MAX 5 140 160 190 250 270 290 360 420 500 580 700 156 176 206 268 288 308 378 440 252 604 724 V V UNIT A
thermal characteristics
PARAMETER RJA Junction to free air thermal resistance TEST CONDITIONS EIA/JESD51-3 PCB, IT = ITSM(1000), TA = 25 C, (see Note 7) MIN TYP MAX 50 UNIT C/W
NOTE
7: EIA/JESD51-2 environment and PCB has standard footprint dimensions connected with 5 A rated printed wiring track widths.
PRODUCT
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INFORMATION
TISP3070H3SL THRU TISP3095H3SL, TISP3125H3SL THRU TISP3210H3SL TISP3250H3SL THRU TISP3350H3SL DUAL BIDIRECTIONAL THYRISTOR OVERVOLTAGE PROTECTORS
JANUARY 1999 - REVISED MAY 1999
PARAMETER MEASUREMENT INFORMATION
+i ITSP Quadrant I Switching Characteristic
ITSM IT VT IH V(BO) I(BO)
-v IDRM
VDRM
VD
ID ID VD VDRM
IDRM +v
I(BO) V(BO)
IH VT IT ITSM
Quadrant III Switching Characteristic ITSP -i VD = 50 V and ID = 10 A used for reliability release
PM4XAAC
Figure 1. VOLTAGE-CURRENT CHARACTERISTIC FOR TERMINAL PAIRS
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INFORMATION
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TISP3070H3SL THRU TISP3095H3SL, TISP3125H3SL THRU TISP3210H3SL TISP3250H3SL THRU TISP3350H3SL DUAL BIDIRECTIONAL THYRISTOR OVERVOLTAGE PROTECTORS
JANUARY 1999 - REVISED MAY 1999
TYPICAL CHARACTERISTICS
OFF-STATE CURRENT vs JUNCTION TEMPERATURE
100 VD = 50 V Normalised Breakover Voltage 10 |ID| - Off-State Current - A
TCHAG
1.10
NORMALISED BREAKOVER VOLTAGE vs JUNCTION TEMPERATURE TC4HAF
1.05
1
0*1
1.00
0*01
0*001 -25 0 25 50 75 100 125 TJ - Junction Temperature - C 150
0.95 -25 0 25 50 75 100 125 TJ - Junction Temperature - C 150
Figure 2. ON-STATE CURRENT vs ON-STATE VOLTAGE
200 150 100 70 IT - On-State Current - A 50 40 30 20 15 10 7 5 4 3 2 1.5 1 0.7 '3125 THRU '3210 TA = 25 C tW = 100 s Normalised Holding Current
Figure 3. NORMALISED HOLDING CURRENT vs JUNCTION TEMPERATURE TC4HAD
2.0
1.5
1.0 0.9 0.8 0.7 0.6 0.5 0.4
'3250 THRU '3350 1
'3070 THRU '3095 1.5 2 3 45 VT - On-State Voltage - V 7 10
-25
0 25 50 75 100 125 TJ - Junction Temperature - C
150
Figure 4.
Figure 5.
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INFORMATION
TISP3070H3SL THRU TISP3095H3SL, TISP3125H3SL THRU TISP3210H3SL TISP3250H3SL THRU TISP3350H3SL DUAL BIDIRECTIONAL THYRISTOR OVERVOLTAGE PROTECTORS
JANUARY 1999 - REVISED MAY 1999
TYPICAL CHARACTERISTICS
NORMALISED CAPACITANCE vs OFF-STATE VOLTAGE
TJ = 25C Vd = 1 Vrms
DIFFERENTIAL OFF-STATE CAPACITANCE vs RATED REPETITIVE PEAK OFF-STATE VOLTAGE
75 '3070 '3080 '3095 '3250 200 '3125 '3135 '3145 C - Differential Off-State Capacitance - pF 70 65 60 55 50 45 40 35 30 '3180 '3210 '3290 '3350 250 300
1 0.9 0.8 Capacitance Normalised to VD = 0 0.7 0.6 0.5
C = Coff(-2 V) - Coff(-50 V)
'3070 THRU '3095 0.4
0.3
'3125 THRU '3210 '3250 THRU '3350
0.2 0.5
1
2
3
5
10
20 30
50
100150
50
60 70 80 90100
150
VD - Off-state Voltage - V
VDRM - Repetitive Peak Off-State Voltage - V
Figure 6.
Figure 7.
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INFORMATION
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TISP3070H3SL THRU TISP3095H3SL, TISP3125H3SL THRU TISP3210H3SL TISP3250H3SL THRU TISP3350H3SL DUAL BIDIRECTIONAL THYRISTOR OVERVOLTAGE PROTECTORS
JANUARY 1999 - REVISED MAY 1999
RATING AND THERMAL INFORMATION
NON-REPETITIVE PEAK ON-STATE CURRENT vs CURRENT DURATION
TI4HACA
ITSM(t) - Non-Repetitive Peak On-State Current - A
20 15 10 9 8 7 6 5 4 3 2 1.5 1 0*1 VGEN = 600 V rms, 50/60 Hz RGEN = 1.4*VGEN/ITSM(t) EIA/JESD51-2 ENVIRONMENT EIA/JESD51-3 PCB, TA = 25 C SIMULTANEOUS OPERATION OF R AND T TERMINALS. G TERMINAL CURRENT = 2xITSM(t)
1
10 100 t - Current Duration - s
1000
Figure 8. VDRM DERATING FACTOR vs MINIMUM AMBIENT TEMPERATURE
1.00 0.99 0.98 Impulse Current - A Derating Factor 0.97 '3070 THRU '3095 0.96 0.95 '3125 THRU '3210 0.94 '3250 THRU '3350 0.93 -40 -35 -30 -25 -20 -15 -10 -5 0 5 10 15 20 25 120 BELLCORE 10/1000 100 90 -40 -30 -20 -10 0 10 20 30 40 50 60 70 80 700 600 500 400 300 250 ITU-T 10/700 200 FCC 10/560 150 IEC 1.2/50, 8/20 BELLCORE 2/10
IMPULSE RATING vs AMBIENT TEMPERATURE
TC4HAA
FCC 10/160
TAMIN - Minimum Ambient Temperature - C
TA - Ambient Temperature - C
Figure 9.
Figure 10.
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INFORMATION
TISP3070H3SL THRU TISP3095H3SL, TISP3125H3SL THRU TISP3210H3SL TISP3250H3SL THRU TISP3350H3SL DUAL BIDIRECTIONAL THYRISTOR OVERVOLTAGE PROTECTORS
JANUARY 1999 - REVISED MAY 1999
APPLICATIONS INFORMATION impulse testing
To verify the withstand capability and safety of the equipment, standards require that the equipment is tested with various impulse wave forms. The table below shows some common values.
PEAK VOLTAGE STANDARD SETTING V GR-1089-CORE 2500 1000 1500 FCC Part 68 (March 1998) I3124 ITU-T K20/K21 800 1500 1000 1500 1500 4000 VOLTAGE WAVE FORM s 2/10 10/1000 10/160 10/560 9/720 9/720 0.5/700 10/700 PEAK CURRENT VALUE A 500 100 200 100 37.5 25 37.5 37.5 100 CURRENT WAVE FORM s 2/10 10/1000 10/160 10/560 5/320 5/320 0.2/310 5/310 TISP3xxxH3 25 C RATING A 500 100 250 160 200 200 200 200 SERIES RESISTANCE 0 0 0 0 0 0 0
FCC Part 68 terminology for the waveforms produced by the ITU-T recommendation K21 10/700 impulse generator
If the impulse generator current exceeds the protectors current rating then a series resistance can be used to reduce the current to the protectors rated value and so prevent possible failure. The required value of series resistance for a given waveform is given by the following calculations. First, the minimum total circuit impedance is found by dividing the impulse generators peak voltage by the protectors rated current. The impulse generators fictive impedance (generators peak voltage divided by peak short circuit current) is then subtracted from the minimum total circuit impedance to give the required value of series resistance. In some cases the equipment will require verification over a temperature range. By using the rated waveform values from Figure 10, the appropriate series resistor value can be calculated for ambient temperatures in the range of -40 C to 85 C.
a.c. power testing
The protector can withstand the G return currents applied for times not exceeding those shown in Figure 8. Currents that exceed these times must be terminated or reduced to avoid protector failure. Fuses, PTC (Positive Temperature Coefficient) resistors and fusible resistors are overcurrent protection devices which can be used to reduce the current flow. Protective fuses may range from a few hundred milliamperes to one ampere. In some cases it may be necessary to add some extra series resistance to prevent the fuse opening during impulse testing. The current versus time characteristic of the overcurrent protector must be below the line shown in Figure 8. In some cases there may be a further time limit imposed by the test standard (e.g. UL 1459 wiring simulator failure).
capacitance
The protector characteristic off-state capacitance values are given for d.c. bias voltage, VD, values of 0, -1 V, -2 V and -50 V. Where possible values are also given for -100 V. Values for other voltages may be calculated by multiplying the VD = 0 capacitance value by the factor given in Figure 6. Up to 10 MHz the capacitance is essentially independent of frequency. Above 10 MHz the effective capacitance is strongly dependent on connection inductance. In many applications, the typical conductor bias voltages will be about -2 V and -50 V. Figure 7 shows the differential (line unbalance) capacitance caused by biasing one protector at -2 V and the other at -50 V.
PRODUCT
INFORMATION
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TISP3070H3SL THRU TISP3095H3SL, TISP3125H3SL THRU TISP3210H3SL TISP3250H3SL THRU TISP3350H3SL DUAL BIDIRECTIONAL THYRISTOR OVERVOLTAGE PROTECTORS
JANUARY 1999 - REVISED MAY 1999
normal system voltage levels
The protector should not clip or limit the voltages that occur in normal system operation. For unusual conditions, such as ringing without the line connected, some degree of clipping is permissible. Under this condition, about 10 V of clipping is normally possible without activating the ring trip circuit. Figure 9 allows the calculation of the protector VDRM value at temperatures below 25 C. The calculated value should not be less than the maximum normal system voltages. The TISP3290H3, with a VDRM of 220 V, can be used for the protection of ring generators producing 105 V rms of ring on a battery voltage of -58 V. The peak ring voltage will be 58 + 1.414*105 = 206.5 V. However, this is the open circuit voltage and the connection of the line and its equipment will reduce the peak voltage. For the extreme case of an unconnected line, the temperature at which clipping begins can be calculated using the data from Figure 9. To possibly clip, the VDRM value has to be 206.5 V. This is a reduction of the 220 V 25 C VDRM value by a factor of 206.5/220 = 0.94. Figure 9 shows that a 0.94 reduction will occur at an ambient temperature of -32 C. In this example, the TISP3290H3 will allow normal equipment operation, even on an open-circuit line, provided that the minimum expected ambient temperature does not fall below -32 C.
JESD51 thermal measurement method
To standardise thermal measurements, the EIA (Electronic Industries Alliance) has created the JESD51 standard. Part 2 of the standard (JESD51-2, 1995) describes the test environment. This is a 0.0283 m3 (1 ft3) cube which contains the test PCB (Printed Circuit Board) horizontally mounted at the centre. Part 3 of the standard (JESD51-3, 1996) defines two test PCBs for surface mount components; one for packages smaller than 27 mm on a side and the other for packages up to 48 mm. The thermal measurements used the smaller 76.2 mm x 114.3 mm (3.0 " x 4.5 ") PCB. The JESD51-3 PCBs are designed to have low effective thermal conductivity (high thermal resistance) and represent a worse case condition. The PCBs used in the majority of applications will achieve lower values of thermal resistance and so can dissipate higher power levels than indicated by the JESD51 values.
PRODUCT
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INFORMATION
TISP3070H3SL THRU TISP3095H3SL, TISP3125H3SL THRU TISP3210H3SL TISP3250H3SL THRU TISP3350H3SL DUAL BIDIRECTIONAL THYRISTOR OVERVOLTAGE PROTECTORS
JANUARY 1999 - REVISED MAY 1999
MECHANICAL DATA SL003 3-pin plastic single-in-line package
This single-in-line package consists of a circuit mounted on a lead frame and encapsulated within a plastic compound. The compound will withstand soldering temperature with no deformation, and circuit performance characteristics will remain stable when operated in high humidity conditions. Leads require no additional cleaning or processing when used in soldered assembly.
SL003 10,2 (0.400) MAX 4,57 (0.180) MAX
8,31 (0.327) MAX Index Dot 12,9 (0.492) MAX
6,60 (0.260) 6,10 (0.240)
4,267 (0.168) MIN 1 2 3 Pin Spacing 2,54 (0.100) T.P. (see Note A) 2 Places
1,854 (0.073) MAX
0,356 (0.014) 0,203 (0.008) 3 Places
0,711 (0.028) 0,559 (0.022) 3 Places
ALL LINEAR DIMENSIONS ARE IN MILLIMETERS AND PARENTHETICALLY IN INCHES NOTES: A. Each pin centerline is located within 0,25 (0.010) of its true longitudinal position. B. Body molding flash of up to 0,15 (0.006) may occur in the package lead plane.
MDXXAD
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INFORMATION
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TISP3070H3SL THRU TISP3095H3SL, TISP3125H3SL THRU TISP3210H3SL TISP3250H3SL THRU TISP3350H3SL DUAL BIDIRECTIONAL THYRISTOR OVERVOLTAGE PROTECTORS
JANUARY 1999 - REVISED MAY 1999
IMPORTANT NOTICE
Power Innovations Limited (PI) reserves the right to make changes to its products or to discontinue any semiconductor product or service without notice, and advises its customers to verify, before placing orders, that the information being relied on is current. PI warrants performance of its semiconductor products to the specifications applicable at the time of sale in accordance with PI's standard warranty. Testing and other quality control techniques are utilized to the extent PI deems necessary to support this warranty. Specific testing of all parameters of each device is not necessarily performed, except those mandated by government requirements. PI assumes no liability for applications assistance, customer product design, software performance, or infringement of patents or services described herein. Nor is any license, either express or implied, granted under any patent right, copyright, design right, or other intellectual property right of PI covering or relating to any combination, machine, or process in which such semiconductor products or services might be or are used. PI SEMICONDUCTOR PRODUCTS ARE NOT DESIGNED, INTENDED, AUTHORISED, OR WARRANTED TO BE SUITABLE FOR USE IN LIFE-SUPPORT APPLICATIONS, DEVICES OR SYSTEMS.
Copyright (c) 1999, Power Innovations Limited
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INFORMATION

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